VEMD5060X01 www.vishay.com vishay semiconductors rev. 1.1, 21-mar-16 1 document number: 84278 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description VEMD5060X01 is a high speed and high sensitive pin photodiode with a highly linear photoresponse. it is a low profile surface mount device (smd) including the chip with a 7.5 mm 2 sensitive area detecting visible and near infrared radiation. features ? package type: surface mount ? package form: top view ? dimensions (l x w x h in mm): 5 x 4 x 0.9 ? radiant sensitive area (in mm 2 ): 7.5 ? aec-q101 qualified ? high photo sensitivity ? high radiant sensitivity ? excellent i ra linearity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 65 ? floor life: 72 h, msl 4, according to j-std-020 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? high speed photo detector ? small signal detection ? proximity sensors note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i ra (a) ? (deg) 0.1 (nm) VEMD5060X01 26 65 350 to 1070 ordering information ordering code packaging remarks package form VEMD5060X01 tape and reel moq: 1000 pcs, 1000 pcs/reel top view VEMD5060X01-gs15 tape and reel moq: 5000 pcs, 5000 pcs/reel top view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 20 v power dissi pation t amb 25 c p v 240 mw junction temperature t j 110 c operating temperature range t amb -40 to +110 c storage temperature range t stg -40 to +110 c soldering temperature according to reflow solder profile fig. 8 t sd 260 c thermal resistance junction / ambient according to eia / jesd51 r thja 350 k/w esd safety hbm 2000 v, 1.5 k , 100 pf, 3 pulses esd hbm 2 kv
VEMD5060X01 www.vishay.com vishay semiconductors rev. 1.1, 21-mar-16 2 document number: 84278 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) basic characteristics graphs to be extended to 110 c ambient temperatures where applicable. fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f -0.81.0v breakdown voltage i r = 100 a, e = 0 v (br) 20 - - v reverse dark current v r = 10 v, e = 0 i ro - 0.2 10 na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d -80-pf v r = 3 v, f = 1 mhz, e = 0 c d -3540pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o - 350 - mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo --2.6-mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k -26-a temperature coefficient of i k e e = 1 mw/cm 2 , = 835 nm tk ik -0.1-%/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 20 26 31 a e e = 1 mw/cm 2 , = 890 nm, v r = 5 v i ra -38-a angle of half sensitivity ? - 65-deg wavelength of peak sensitivity p - 820 - nm range of spectral bandwidth 0.1 - 350 to 1070 - nm rise time v r = 5 v, r l = 50 , = 820 nm t r -30-ns fall time v r = 5 v, r l = 50 , = 820 nm t f -30-ns 0.001 0.01 0.1 1 10 100 1000 -40-200 20406080100 i ro - rever s e dark current (na) t amb - ambient temperature ( c) v r = 10 v 0.6 0.8 1.0 1.2 1.4 -40-200 20406080100 i ra rel - relative rever s e light current t amb - ambient temperature ( c) 835 nm v r = 10 v 940 nm 865 nm
VEMD5060X01 www.vishay.com vishay semiconductors rev. 1.1, 21-mar-16 3 document number: 84278 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.1 1 10 100 1000 0.01 0.1 1 10 i ra - rever s e light current (a) e e - irradiance (mw/cm 2 ) v r = 5 v, = 950 nm 0.1 1 10 100 1000 0.1 1 10 100 i ra - rever s e light current (a) v r - rever s e voltage (v) 0.01 mw/cm 2 0.02 mw/cm 2 0.05 mw/cm 2 0.1 mw/cm 2 0.2 mw/cm 2 2.0 mw/cm 2 5.0 mw/cm 2 0.5 mw/cm 2 1.0 mw/cm 2 10 mw/cm 2 = 950 nm 0 10 20 30 40 50 60 70 80 90 0.001 0.01 0.1 1 10 100 c d - capacitance (pf) v r - rever s e voltage (v) f = 1 mhz, e = 0 0 0.2 0.4 0.6 0.8 1.0 400 500 600 700 800 900 1000 1100 s ( ) rel - relative s pectral s en s itivity - wavelength (nm) s rel - relative radiant s en s itivity 0.6 80 0 0.7 0.4 0.2 0 30 70 60 50 40 10 20 1.0 0.9 0.8 ? - angular di s placement
VEMD5060X01 www.vishay.com vishay semiconductors rev. 1.1, 21-mar-16 4 document number: 84278 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters drawing- no.: 6.550-5329.01-4 i ss ue: 2; 03.03.2016 c not indicated tolerance s 0.1 technical drawing s according to din s pecification 1 1 5.2 1 center of device recommended footprint optical window top view bottom view 4 5 0.9 0.15 tie bar, electrically connected to cathode 2.1 0.8 1.2 0.9 1.2 2.5 0.8 0.8 0.6 (4 x) 3.1 expo s ed pad (cathode) 1.8 3 3 0.4 (4 x) 2 2 optical center c (20 : 1) 0.2 0.1 1.8 4.1 cathode 0.6 nc anode 0.65
VEMD5060X01 www.vishay.com vishay semiconductors rev. 1.1, 21-mar-16 5 document number: 84278 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tape and reel dimensions in millimeters drawing-no.: 9.800-5129.01-4; i ss ue: 1; 20.07.2015 x b-b ( 2 : 1 ) x b b reel-de s ign i s repere s entative for different type s unreel direction label po s ted here 0.3 1.42 ? 1.5 ? 1.55 8 2 1.75 5.5 anode
VEMD5060X01 www.vishay.com vishay semiconductors rev. 1.1, 21-mar-16 6 document number: 84278 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 8 - lead (pb)-free reflow solder profile according to j-std-020d drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life time between soldering and re moving from mbb must not exceed the time indicated in j-std-020: moisture sensitivity: level 4 floor life: 72 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorption devices should be baked before soldering. conditions see j-std-020 or recommended conditions: 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
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